Selective Etch for Micromachining Process in Manufacturing Hybrid Microdevices composed of Ni-Mn-Ga and Silicon Layers

The goal of this study is to make selective etch possible for the next generation MEMS(microelectromechanical systems) devices that are composed Ni-Mn-Ga and silicon layers. Due tothe large magnetic-field-induced strains Ni-Mn-Ga, sensing actuating components can be fab-ricated in Other functional manufactured layer.Single crystalline alloys grown by using Bridgman vertical growth techniquehave so far obtained largest magnetic field-induced strain (MFIS), a shape memory(MSM) effect. Similar wafers, wafers also sliced from crystal-oriented singlecrystalline ingots. To fabricate hybrid MEMS such as micromanipulators robots, lab-on-chip containing micropump manifolds valves, or vibration energy harvesters, fabricationprocesses used will layer ofthe devices. One most important processes fabrication structur-ing materials chemical etching. main obtain evidence etchantetches but not identify an etchant etches silicon. Thepresent paper reports on novel experiment dissolving alloys. An compositionof 69% HNO3, 98% H2SO4, CuSO4•5H2O proposed thevariation dissolution rate adjusting concentrations HNO3 ultrapure water (UPW)is demonstrated. This was demonstrated HF+HNO3acidic solution commonly etching does dissolve